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| MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20DX-H * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 70 C1 C1 E1C2 E1 B1 60 1.7 B2 E1 5.5 Tab#110, t=0.5 8 6.35 2.8 Tab#250, t=0.8 LABEL 8 8 8 4.6 1.2 Tr1 B1 Tr2 B2 E2 E2 E2 27 E1C2 E2 11 15 26 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 160 1 200 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 75 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=0.28A -IC=20A (diode forward voltage) IC=20A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=20A, IB1=-IB2=0.4A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 2.0 2.5 1.5 -- 1.5 12 2.0 0.8 2.2 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C 10 3 7 5 4 3 2 VCE=2.0V 10 2 7 5 4 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=5.0V COLLECTOR CURRENT IC (A) 40 IB=0.4A 30 IB=0.2A IB=0.1A 20 10 IB=0.06A IB=0.02A 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 VCE=2.0V 5 Tj=25C 4 3 2 10 0 7 5 4 3 2 10 -1 1.2 1.6 2.0 2.4 2.8 3.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) Tj=25C Tj=125C IB=0.28A 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 IC=5A IC=10A IC=20A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 3 2 SWITCHING TIME 10 1 7 5 4 3 2 ts VCC=300V IB1=-IB2=0.4A 1 Tj=25C Tj=125C 2 3 4 5 7 10 -2 0 7 10 -3 2 3 45 7 tf 10 0 7 5 ton 4 Tj=25C 3 Tj=125C 2 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 50 ts 10 1 7 5 4 3 2 10 0 COLLECTOR CURRENT IC (A) ts, tf (s) 40 IB2=-0.5A -1A Tj=125C SWITCHING TIME 30 tf VCC=300V IB1=0.4A 7 IC=20A 5 Tj=25C 4 Tj=125C 3 3 4 5 7 10 -1 2 3 4 5 7 10 0 20 10 23 0 0 200 400 600 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 1 100 TC=25C NON-REPETITIVE 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 50 S 10 0 50 0 S 1m S S COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 45 7 10 2 1.0 0.8 DC 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 20 40 60 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -22 3 4 5 7 10 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 10 1 VCC=300V IB1=-IB2=0.4A Tj=25C Tj=125C trr (s) Feb.1999 Irr 10 0 trr Qrr 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 3.0 Zth (j-c) (C/ W) 2.0 1.0 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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